This paper describes the formation process of Zinc oxide (ZnO) p-type silicon nanowires (SiNWs) and etching depth on the electrical Schottky property. First, the sharp and self-aligned p-type SiNWs arrays are formed vertically by the metal-mask assisted AgNO3/HF chemical etching of Si wafers. Then, a ZnO/SiNWs heterojunction diode is fabricated by depositing ZnO thin film on the vertically aligned SiNWs arrays. The structural and electrical properties of the grown ZnO/SiNWs heterojunction diode are characterized by X-ray diffraction (XRD), Scanning Electron Microscope (SEM) and electrical current−voltage (I−V) measurements. From I-V experimental results, it is found that a well-characteristic diode behavior is revealed with a rectification ratio of 97.6 and a turn-on voltage of 0.5V under dark conditions. On the contrary, there is no rectified characteric is revealed just appearing the ohmic linear line while the etching time is over 30 minutes. This phenomenon may be resulted from the punch-through due to the over-etching process. By this kind of study based on the Schottky I-V characteristics with different conditions, it will also enhance us to understand the physical realization in this ZnO p-type SiNWs.

Login to Download PDF

Please login with your Paper ID and password to access the full PDF.

🔑 Login to Download