In this study, the traditional model for sub-micron GaAs MESFETs has been modified. A seven-parameter nonlinear current–voltage (I–V) characteristics model for sub-micrometer range GaAs MESFETs has been developed. The effects of both drain-to-source voltage, VDS, and gate-to-source voltage, VGS, on the output conductance, gm, have been incorporated and investigated. For the comparison with published models, an improved mean square error (MSE) technique has been employed instead of root mean square (RMS) error technique. This kind of simulation has also been developed by the optimization of empirical constants of the model. Sub-micron range MESFETs of different aspect ratios have been calculated with greater accuracy by the modified model. The modified model should be a useful tool for the design of future integrated circuits with sub-micron gate length GaAs MESFETs.

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