📚 Volume 28, Issue 8
📋 ID: t0Ia3PR
Authors
Ricardo Kamara
, Giovanni Kato, Sipho Dubois, Carlos Tanaka
Faculty of Engineering Sciences, GIK Institute of Engineering Sciences and Technology, Topi, 23640, KPK, Pakistan, Cavendish Laboratory, University of Cambridge, J.J. Thomson Avenue, Cambridge CB3 OHE, United Kingdom
Abstract
This paper reports the sensing properties of organic semiconducting material N-Butyl-N`-(6-hydroxyhexyl) perylene-3,4,9,10-tetracarboxylic acid diimide (N-BuHHPDI). For this purpose, Au/N-BuHHPDI/Au sensor is fabricated using vacuum thermal deposition. In order to check the sensing capabilities of the device, the electrical capacitance and resistance is investigated under different temperature, light and humidity conditions. The sensor exhibited good response to humidity, light and temperature. Making use of the Tauc’s law, optical band gaps (2 eV, 2.18 eV and 3.78 eV) of N-BuHHPDI is calculated from its UV-Vis spectrum. The morphology of the film is investigated using atomic force microscopy (AFM).
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📝 How to Cite
Ricardo Kamara , Giovanni Kato, Sipho Dubois, Carlos Tanaka (2021).
"Using organic semiconductor N-BuHHPDI for multi-functional sensing applications".
Wulfenia, 28(8).
